339113
乙醇钽(V)
99.98% trace metals basis
别名:
乙醇钽, 乙醇钽（V）, 五乙氧基钽, 五氧化钽, 钽酸五乙酯
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关于此项目
线性分子式:
Ta(OC2H5)5
化学文摘社编号:
分子量:
406.25
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
MDL number:
Beilstein/REAXYS Number:
3678999
Quality Level
assay
99.98% trace metals basis
form
liquid
reaction suitability
core: tantalum, reagent type: catalyst
impurities
<2 wt. % toluene
refractive index
n20/D 1.487 (lit.)
bp
155 °C/0.01 mmHg (lit.)
mp
21 °C (lit.)
density
1.566 g/mL at 25 °C (lit.)
SMILES string
CCO[Ta](OCC)(OCC)(OCC)OCC
InChI
1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5
InChI key
HSXKFDGTKKAEHL-UHFFFAOYSA-N
General description
Tantalum(V) ethoxide is primarily used to produce tantalum oxide thin films for applications in optics, semiconductors, and electrochromic devices. These films possess high refractive index and excellent electrical insulation properties. Additionally, when tantalum is alloyed with other metals, it gains enhanced strength, ductility, and corrosion resistance, making it highly suitable for applications in electronics and advanced materials. Our 99.98% trace metals basis of Tantalum(V) ethoxide is suitable for the synthesis of tantalum oxide by chemical vapor deposition (CVD).
Application
Tantalum ethoxide is used as a precursor
- To synthesize modified tantalum-alkoxo complexes, enabling the fabrication of Ta₂O₅ thin films with tunable optical properties.
- In the sol–gel synthesis of tantalum oxide nanoparticles, which, when doped with rare earth elements, form wide band gap semiconductors showing both stokes and anti-stokes visible luminescence.
- To synthesize hollow TaOx nanoshells in the formation of Bi₂S₃@TaOx-HA core–shell nanoparticles, which serve as multifunctional theranostic agents for CT/photoacoustic imaging and enhanced photothermal cancer therapy.
Features and Benefits
- 99.98% purity on a trace metals basis ensures minimal contamination for critical applications, resulting in superior quality materials.
- Low metal impurities (< 250.0 ppm) enhance sol-gel formation for the synthesis of nanoparticles.
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Warning
hcodes
Hazard Classifications
Flam. Liq. 3
存储类别
3 - Flammable liquids
wgk
WGK 1
flash_point_f
84.2 °F - closed cup
flash_point_c
29 °C - closed cup
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
法规信息
危险化学品
此项目有
商品
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 339113-100G | 04061826745847 |
| 339113-10G | 04061826745861 |