553468
三(叔丁氧基)硅烷醇
99.999%
别名:
TBS
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关于此项目
线性分子式:
((CH3)3CO)3SiOH
化学文摘社编号:
分子量:
264.43
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
Quality Level
assay
99.999%
form
solid
bp
205-210 °C (lit.)
mp
63-65 °C (lit.)
SMILES string
CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C
InChI
1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3
InChI key
HLDBBQREZCVBMA-UHFFFAOYSA-N
General description
三(叔丁氧基)硅烷醇可以与各种金属烷基酰胺反应，作为气相沉积金属硅酸盐的前体。它也是二氧化硅沉积的理想前体。
Application
三(叔丁氧基)硅烷醇与四(二甲基氨基)-铪蒸气（Hf(N(CH3)2)4）反应，用于硅酸铪玻璃膜的气相沉积。三(叔丁氧基)硅烷醇被用于无定形二氧化硅和氧化铝纳米层的高度共形层的原子层沉积（ALD）。
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存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
商品
atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer
Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 553468-5G | 04061832582115 |
| 553468-25G | 04061833599150 |