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Merck
CN

P1802

并五苯

99%

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关于此项目

经验公式(希尔记法):
C22H14
化学文摘社编号:
分子量:
278.35
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
EC Number:
205-193-7
Beilstein/REAXYS Number:
1912418
MDL number:
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Quality Level

assay

99%

form

powder

mp

372-374 °C (subl.)

solubility

organic solvents: slightly soluble

orbital energy

HOMO 5 eV , LUMO 3 eV 

OPV device performance

ITO/pentacene/C60/BCP/Al

  • Short-circuit current density (Jsc): 15 mA/cm2
  • Open-circuit voltage (Voc): 0.36 V
  • Fill Factor (FF): 0.5
  • Power Conversion Efficiency (PCE): 2.7 %

semiconductor properties

P-type (mobility=0.4-3 cm2/V·s) (on/off ratio=1E5-1E8)

SMILES string

c1ccc2cc3cc4cc5ccccc5cc4cc3cc2c1

InChI

1S/C22H14/c1-2-6-16-10-20-14-22-12-18-8-4-3-7-17(18)11-21(22)13-19(20)9-15(16)5-1/h1-14H

InChI key

SLIUAWYAILUBJU-UHFFFAOYSA-N

General description

并五苯属于稠合多环烃类,是含五环并苯族的成员。由于其2V−1s−1 的空穴迁移率高,在 578 nm 波长处具有荧光吸收峰,主要用于各类电子应用。
并五苯是一种常用的有机半导体。在任何绝缘基板上沉积后,分子组织形成多晶薄膜。并五苯薄膜显示良好的输运性能。围绕在碳骨架周围的氢原子的电负性低于碳骨架本身,并为离域 π 电子云提供了一些电子密度。它也可形成大晶体。

Application

可用聚(4-乙烯基苯酚)(PVP)官能化并五苯,降低有机薄膜晶体管(OTFT)的表面能,将空穴迁移率提高109%。并五苯主要用于制造场效应晶体管,可以掺杂碘,将阈值电压提高至140V。

Packaging

无底玻璃瓶。内容物在插入的熔锥内。


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存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)



历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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商品

Small molecular weight organic semiconductors are promising for flexible transistor applications in next-gen soft electronics.

Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.

Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.

查看所有文章

Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift.
Wang SD, et al.
Applied Physics Letters, 92(6), 063305-063305 (2008)
Young Jin Choi et al.
ACS nano, 13(7), 7877-7885 (2019-06-28)
This paper introduces a strategy to modulate a Schottky barrier formed at a graphene-semiconductor heterojunction. The modulation is performed by controlling the work function of graphene from a gate that is placed laterally away from the graphene-semiconductor junction, which we
Pentacene thin-film transistors with polymeric gate dielectric.
Puigdollars J, et al.
Organic Electronics, 5(1), 67-71 (2004)



全球贸易项目编号

货号GTIN
P1802-100MG04061834356769
P1802-5G04061832991863
P1802-1G04061826246627