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202894

Cadmium oxide

≥99.99% trace metals basis

Synonym(s):

Cadmia

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About This Item

Linear Formula:
CdO
CAS Number:
1306-19-0
Molecular Weight:
128.41
PubChem Substance ID:
24852127
eCl@ss:
38150602
UNSPSC Code:
12352303
NACRES:
NA.23
EC Number:
215-146-2
MDL number:
MFCD00010921
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Quality Level

100

assay

≥99.99% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: cadmium

density

8.15 g/mL at 25 °C (lit.)

SMILES string

O=[Cd]

InChI

1S/Cd.O

InChI key

CXKCTMHTOKXKQT-UHFFFAOYSA-N

General description

Cadmium oxide (CdO) is a semiconducting material with high conductivity which isoptically transparent in the electromagnetic spectra. It has a direct bandgap of 2.28 eV and can form a single crystal material by metal organic vapor phase epitaxy (MOVPE) growth.

Application

CdO can be used in the synthesis of cadmium selenide quantum dots for potential applications in photocatalysis. It is used as a transparent conducting oxide (TCO) which can further be used in a variety of opto-electronic devices.

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Danger

Hazard Classifications

Acute Tox. 2 Inhalation - Aquatic Acute 1 - Aquatic Chronic 1 - Carc. 1B - Muta. 2 - Repr. 2 - STOT RE 1

Storage Class

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

wgk

WGK 3

ppe

dust mask type N95 (US), Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges

Regulatory Information

危险化学品

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Certificates of Analysis (COA)

Lot/Batch Number
MKBZ2890V
MKBW3336V
MKBV7629V
MKBV6736V
MKBT7524V

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Electrical and optical properties of Al doped cadmium oxide thin films deposited by radio frequency magnetron sputtering
Saha B, et al.
Solar Energy Materials and Solar Cells, 91(18), 1692-1697 (2007)
Bandgap and effective mass of epitaxial cadmium oxide
Jefferson PH, et al.
Applied Physics Letters, 92(2), 022101-022101 (2008)
Sachidananda Krishnamurthy et al.
ACS nano, 15(1), 575-587 (2021-01-01)
We synthesized PbS/CdS core/shell quantum dots (QDs) to have functional single-emitter properties for room-temperature, solid-state operation in the telecom O and S bands. Two shell-growth methods-cation exchange and successive ionic layer adsorption and reaction (SILAR)-were employed to prepare QD heterostructures
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Global Trade Item Number

SKUGTIN
202894-25G04061838765352
202894-5G04061838765369