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About This Item
Linear Formula:
AlN
CAS Number:
Molecular Weight:
40.99
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
246-140-8
MDL number:
assay
≥98%
form
powder
reaction suitability
core: aluminum
particle size
10 μm
mp
>2200 °C (lit.)
density
3.26 g/mL at 25 °C (lit.)
SMILES string
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
General description
Aluminum Nitride(AlN) is a non-oxide semiconductor material with a hexagonal Wurtzite crystal structure. It has a wide direct bandgap of 6.12 eV. AIN is a suitable additive in making thermal grease and electric cable insulation owing to its very high thermal conductivity (300 W/(m. K)) and electrical resistivity. It is also used in microelectronics, electroluminescent devices, and sensors because of its non-toxicity, superior thermal, electrical, mechanical, and chemical properties.
Application
Aluminum Nitride can be used as a:
- ceramic material in the preparation of nano capsulated phase change material for building thermal management systems.
- matrix in the preparation of metacomposites along with graphene platelets to improve their thermal conductive properties.
- foaming agent in the preparation of foam glass using glass waste.
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signalword
Danger
hcodes
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
target_organs
Lungs
Storage Class
4.3 - Hazardous materials which set free flammable gases upon contact with water
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
wgk
WGK 2
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Articles
Conducting polymers such as polyaniline, polythiophene and polyfluorenes are now much in the spotlight for their applications in organic electronics and optoelectronics.
Band structure and fundamental optical transitions in wurtzite AlN
Li, Jing, et al.
Applied Physics Letters, 83(25), 5163-5165 (2003)
Norio Iizuka et al.
Optics express, 17(25), 23247-23253 (2010-01-07)
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size
Electricity generation based on one-dimensional group-III nitride nanomaterials.
Xuebin Wang et al.
Advanced materials (Deerfield Beach, Fla.), 22(19), 2155-2158 (2010-06-22)
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 241903-50G | 04061825477572 |
| 241903-250G | 04061825471730 |