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About This Item
vapor density
5.86 (vs air)
Quality Level
vapor pressure
420 mmHg ( 37.7 °C)
assay
99.998% trace metals basis
form
liquid
reaction suitability
core: silicon
bp
57.6 °C (lit.)
mp
−70 °C (lit.)
density
1.483 g/mL at 25 °C (lit.)
SMILES string
Cl[Si](Cl)(Cl)Cl
InChI
1S/Cl4Si/c1-5(2,3)4
InChI key
FDNAPBUWERUEDA-UHFFFAOYSA-N
General description
Application
- A precursor in the chemical vapor deposition (CVD) process to deposit silicon onto graphite substrates. This approach results development of high-performance anodes for lithium-ion batteries.
- A precursor material in the hydrogen thermal plasma (H-plasma) process to synthesize silicon nanospheres, which are suitable for use as anode materials in lithium-ion batteries.
Features and Benefits
- High Purity (99.998%): Ensures minimal contamination, crucial for optics and photonics applications
- Ideal for Semiconductor applications: Its ultra-high purity supports fabrication of advanced integrated circuits, wafers, and solar cells
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signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Dam. 1 - Skin Corr. 1A - STOT SE 3
target_organs
Respiratory system
supp_hazards
Storage Class
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Faceshields, Gloves, Goggles
Regulatory Information
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Articles
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Global Trade Item Number
| SKU | GTIN |
|---|---|
| 289388-100ML | 04061826284230 |
| 289388-800ML | 04061838145666 |

