329010
Gallium arsenide
pieces, 99.999% trace metals basis
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About This Item
Linear Formula:
GaAs
CAS Number:
Molecular Weight:
144.64
UNSPSC Code:
12352300
PubChem Substance ID:
EC Number:
215-114-8
MDL number:
assay
99.999% trace metals basis
form
pieces
density
5.31 g/mL at 25 °C (lit.)
SMILES string
[Ga]#[As]
InChI
1S/As.Ga
InChI key
JBRZTFJDHDCESZ-UHFFFAOYSA-N
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signalword
Danger
hcodes
Hazard Classifications
Carc. 1B - Repr. 1B - STOT RE 1
target_organs
Respiratory system,hematopoietic system
Storage Class
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Regulatory Information
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Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs