481769
Gallium nitride
99.9% trace metals basis
Synonym(s):
Gallium mononitride, Gallium mononitride (GaN)
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About This Item
Linear Formula:
GaN
CAS Number:
Molecular Weight:
83.73
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
247-129-0
MDL number:
Quality Level
assay
99.9% trace metals basis
form
powder
reaction suitability
core: gallium
mp
800 °C (lit.)
SMILES string
N#[Ga]
InChI
1S/Ga.N
InChI key
JMASRVWKEDWRBT-UHFFFAOYSA-N
Application
Gallium nitride (GaN) is a wide band gap semiconducting material, which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs), and field effect transistors (FETs). It can also be used as a transition metal dopant for spintronics-based applications.
signalword
Warning
hcodes
Hazard Classifications
Skin Sens. 1
Storage Class
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, type N95 (US)
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Articles
Conducting polymers such as polyaniline, polythiophene and polyfluorenes are now much in the spotlight for their applications in organic electronics and optoelectronics.
Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 481769-10G | 04061832388755 |
| 481769-50G | 04061832388762 |