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647675

Silicon

greener alternative

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
NACRES:
NA.23
PubChem Substance ID:
24883416
UNSPSC Code:
12352300
MDL number:
MFCD00085311
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Quality Level

100

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

contains

boron as dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

diam. × thickness

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<100>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Application

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

Packaging

1EA refers to 1 wafer and 5EA refers to 5 wafers

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Storage Class

13 - Non Combustible Solids

wgk

nwg

ppe

Eyeshields, Gloves, type N95 (US)

Regulatory Information

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Certificates of Analysis (COA)

Lot/Batch Number
MKCN7297
MKCL8717
MKCJ1312
MKCD9157
MKCC8060

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Protocols

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Articles

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
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Global Trade Item Number

SKUGTIN
647675-5EA04061832731032
647675-1EA04061832731025