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647764

Silicon

greener alternative

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
NACRES:
NA.23
PubChem Substance ID:
24883547
UNSPSC Code:
12352300
EC Number:
231-130-8
MDL number:
MFCD00085311
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Quality Level

100

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

contains

boron as dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

diam. × thickness

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<100>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

Storage Class

11 - Combustible Solids

wgk

nwg

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Certificates of Analysis (COA)

Lot/Batch Number
MKCQ2413
MKCP6320
MKCN7711
MKCG6828
MKCD0543

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Protocols

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

Articles

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Tzu-Hsuan Tsai et al.
Journal of the Air & Waste Management Association (1995), 63(5), 521-527 (2013-06-22)
The growing demand for silicon solar cells in the global market has greatly increased the amount of silicon sawing waste produced each year. Recycling kerf Si and SiC from sawing waste is an economical method to reduce this waste. This
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Global Trade Item Number

SKUGTIN
647764-1EA04061832731117