Select a Size
About This Item
vapor pressure
69.3 mmHg ( 60 °C)
Quality Level
description
heat of vaporization: ~41.9 kJ/mol (Dimer)
form
liquid
reaction suitability
core: aluminum
bp
125-126 °C (lit.), 127 °C/760 mmHg, 20 °C/8 mmHg, 56 °C/50 mmHg
mp
15 °C (lit.)
density
0.752 g/mL at 25 °C (lit.)
SMILES string
C[Al](C)C
InChI
1S/3CH3.Al/h3*1H3;
InChI key
JLTRXTDYQLMHGR-UHFFFAOYSA-N
General description
Application
- A chemical vapor deposition precursor to fabricate PbSe quantum dot solids for optoelectronic devices.
- An aluminum precursor for the flame synthesis of alumina nanofibers.
- A reagent for efficient synthesis of allenes.
Still not finding the right product?
Explore all of our products under Trimethylaluminum
signalword
Danger
hcodes
supp_hazards
Storage Class
4.2 - Pyrophoric and self-heating hazardous materials
wgk
nwg
flash_point_f
No data available
flash_point_c
No data available
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
Hazard Classifications
Eye Dam. 1 - Pyr. Liq. 1 - Skin Corr. 1B - Water-react. 1
Regulatory Information
This item has
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Articles
近十年来出现了原子层沉积(ALD)技术以满足各种需求,包括半导体器件小型化、多孔结构上的保形沉积和纳米颗粒涂层。ALD基于两个相继的自限性表面反应。
Nanomaterials are considered a route to the innovations required for large-scale implementation of renewable energy technologies in society to make our life sustainable.
Atomic layer deposition (ALD) showcases innovation in novel structure synthesis, area-selective deposition, low-temperature deposition, and more.
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 663301-25G | 04061832734330 |

