Select a Size
About This Item
Quality Level
form
liquid
reaction suitability
core: gallium
bp
92.5 °C/760 mmHg (lit.)
mp
-15.8 °C (lit.)
density
1.132 g/mL at 25 °C
SMILES string
C[Ga](C)C
InChI
1S/3CH3.Ga/h3*1H3;
InChI key
XCZXGTMEAKBVPV-UHFFFAOYSA-N
General description
Application
- A precursor to synthesize β-gallium oxide (β-Ga₂O₃) thin films for high-power electronic devices, offering superior breakdown voltage and thermal stability.
- A precursor for epitaxial growth of gallium nitride (GaN) in blue LEDs and laser diodes, enabling high-brightness displays and optical communication systems.
- A component in colloidal quantum dot synthesis for tunable near-infrared LEDs in biomedical imaging and telecommunications.
- A source material for gallium arsenide (GaAs) layers in high-electron-mobility transistors (HEMTs), critical for 5G millimeter-wave amplifiers.
signalword
Danger
hcodes
supp_hazards
Storage Class
4.2 - Pyrophoric and self-heating hazardous materials
wgk
WGK 3
Hazard Classifications
Eye Dam. 1 - Pyr. Liq. 1 - Skin Corr. 1B - Water-react. 1
Regulatory Information
This item has
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Articles
Nanomaterials are considered a route to the innovations required for large-scale implementation of renewable energy technologies in society to make our life sustainable.
Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition
Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.
Global Trade Item Number
| SKU | GTIN |
|---|---|
| 730734-10G | 04061833607541 |

