87921
四甲基硅烷
≥99.0% (GC)
别名:
TMS
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关于此项目
线性分子式:
Si(CH3)4
化学文摘社编号:
分子量:
88.22
UNSPSC Code:
12352103
NACRES:
NA.22
PubChem Substance ID:
EC Number:
200-899-1
Beilstein/REAXYS Number:
1696908
MDL number:
Assay:
≥99.0% (GC)
Technique(s):
GC/GC: suitable
Bp:
26-28 °C (lit.)
Vapor pressure:
11.66 psi ( 20 °C)
vapor pressure
11.66 psi ( 20 °C)
Quality Level
assay
≥99.0% (GC)
form
liquid
autoignition temp.
842 °F
technique(s)
GC/GC: suitable
refractive index
n20/D 1.358 (lit.), n20/D 1.359
bp
26-28 °C (lit.)
mp
−99 °C (lit.)
density
0.648 g/mL at 25 °C (lit.)
storage temp.
2-8°C
SMILES string
C[Si](C)(C)C
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
InChI key
CZDYPVPMEAXLPK-UHFFFAOYSA-N
Application
四甲基硅烷可用作合成硅掺杂类金刚石碳基(DLC-Si)薄膜和碳化硅(SiC)块状晶体的硅前体。还可用作研究分子间C-H键活化反应的烃类底物。
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signalword
Danger
hcodes
Hazard Classifications
Flam. Liq. 1
存储类别
3 - Flammable liquids
wgk
WGK 3
flash_point_f
-16.6 °F - closed cup
flash_point_c
-27 °C - closed cup
ppe
Eyeshields, Faceshields, Gloves
法规信息
危险化学品
此项目有
Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 87921-100ML | 04061837913105 |